离子束溅射系统

离子束溅射系统

(Ion Beam Sputtering System, IBD)

主要技术指标/Specifications：

极限真空：2´10-4 Pa

Ultimate vacuum: better than 2´10-4 Pa.

镀膜均匀性与重复性：4英寸衬底均匀性优于±5% ，重复性优于±5%

Thickness non-uniformity: better than ±5 % on 4” substrate.

Thickness repeatability: better than ±5%

2个靶位（4inch），2套离子源

Four 2” targets and two ion sources.

基片尺寸：支持4英寸厚度在4毫米以下基片

4” substrate with less than 4mm thickness.

主要用途（应用范围）：

溅射沉积Ti、Cr、Ni、Cu、Au等单层或多层薄膜；可做离子束溅射清洗（IBC），离子束溅射沉积（IBSD）。

Ion beam sputtering deposition (IBSD) of monolayer or multilayer metal/ dielectric film, such as Ti,Cr,Ni,Cu,Au, etc, with capability of ion beam cleaning (IBC) and reactive sputtering.